Investigation of large Stark shifts in InGaN/GaN multiple quantum wells

Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy

Self-assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma-assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 1010 cm–2, respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red sh...

Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

A series of InGaN/GaN multiple quantum wells with different well thicknesses were grown on sapphire by metal organic chemical vapor deposition, and investigated by excitation power density dependent photoluminescence (PL). With increasing excitation power density, the PL peak position showed a blue shift followed by a red shift. It is believed that a screened quantum-confined Stark effect is re...

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Investigation of strain effect in InGaN/GaN multi-quantum wells

The strain effect of InGaN/GaN multi-quantum wells with different indium contents has been studied in the present paper. The high-resolution X-ray diffraction (HRXRD) curves of the samples have been measured and analyzed by a theoretical model. Based on the model, it is found that sample with higher indium content exhibits a stronger internal strain. To further investigate the calculated result...

Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

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